jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 6 - http://www.jjwdz.com j st13 4 series 4a triac s rev. 3 .0 description: jst134 series triacs with low holding and latching current are especially recommended for use on middle and small resistance type power load. main features symbol value unit i t( rms ) 4 a v drm /v rrm 600 v absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage (t j =25 ) v drm 600 v repetitive peak reverse voltage (t j =25 ) v rrm 600 v non repetitive surge peak off - state voltage v dsm v drm + 100 v non repetitive peak reverse voltage v rsm v rrm + 100 v rms on - state current to - 251/ to - 252 (t c = 110 ) i t( rms ) 4 a to - 220b ( non - ins ) (t c =1 13 ) to - 126 (t c =107 ) non repetitive surge peak on - state current ( full cycle, f=50hz ) i tsm 25 a i 2 t value for fusing (tp = 10 m s ) i 2 t 3.1 a 2 s critical rate of rise of on - state current ( i g = 2 i gt ) - - di/dt 50 a / s 10 peak gate current i gm 2 a average gate power dissipation p g(av) 0.5 w t1(1) g(3) t2(2) to-2 51 1 2 3 to-2 52 1 2 3 1 3 2 to- 126 to- 220b (non-insulated) 1 2 3
j st13 4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 6 - http://www.jjwdz.com peak gate power p gm 5 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition quadrant value unit d e i gt v d =12v r l =33 - - max 5 10 ma 10 2 5 v gt all max 1. 5 v v gd v d =v drm t j =125 r l = 3.3 k all min 0.2 v i l i g = 1.2 i g t - - max 1 0 20 ma 15 35 i h i t = 100m a max 1 0 20 ma dv/dt v d =2/3v drm gate ope n t j = 125 min 5 50 v / s (dv/dt)c (di/dt)c =1.1 a / m s t j = 125 min 1 5 v / s static characteristics symbol parameter value(max) unit v tm i t m = 5 a tp= 380 s t j =25 1.7 v i drm v d =v d rm v r =v r rm t j =25 5 a i rrm t j =1 25 1 ma thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 251/ to - 252 3.7 /w to - 220b ( non - ins ) 3.1 to - 126 4.1
j st13 4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 6 - http://www.jjwdz.com ordering information package mechanical data j s t 1 3 4 h - 6 0 0 d j i e j i e m i c r o e l e c t r o n i c s c o . , l t d t r i a c s 6 0 0 : v d r m / v r r m 6 0 0 v d : i g t 1 - 3 5 m a i g t 4 1 0 m a e : i g t 1 - 3 1 0 m a i g t 4 2 5 m a i t ( r m s ) : 4 a q : t o - 1 2 6 b : t o - 2 2 0 b ( n o n - i n s ) h : t o - 2 5 1 k : t o - 2 5 2 a b c h dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c d e f g h j k 7.40 10.6 15.3 3.90 7.80 11.2 16.3 4.10 0.291 0.417 0.602 0.154 0.307 0.441 0.642 0.161 1.17 1.47 2.29 0.046 0.058 0.66 0.86 0.026 0.034 0.090 2.50 2.90 0.098 0.114 1.10 1.50 0.043 0.059 0.45 0.60 0.018 0.024 k f g e j d to-126 max 3.20mm
j st13 4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 6 - http://www.jjwdz.com package mechanical data a v1 v1 v1 d c2 c a2 e b2 l2 h l g l1 b b3 dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 b3 c c2 d e g h l l1 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4 4 to-251 a v1 v1 v1 d c2 e b2 l2 h 0.6 min a2 c l1 g b dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 c c2 d e g h l1 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4 4 4.40 4.70 0.173 0.185 v2 0 8 0 8 v2 to-252
j st13 4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 6 - http://www.jjwdz.com package mechanical data jie a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220b non-ins fig.1: maximum power dissipation versus rms on-state current fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 1 2 3 4 5 0 i t(rms) (a) tc ( ) 0 0 25 50 75 100 125 5 6 1.1 2.2 3.3 4.4 5.5 6.6 1 2 3 4 to-251/to-252 to-126 to-220b insulated =180 fig.3: surge peak on-state current versus number of cycles fig.4: on-state characteristics (maximum values) 1 10 100 1000 number of cycles 0 i tsm (a) i tm (a) v tm (v) 0 1 2 3 4 5 0.1 1 tj=25 8 16 24 10 tj=tjmax 4 12 20 28 30 t=20ms one cycle
j st13 4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 6 / 6 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangsu jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the t hir d version which is made in 1 0 - j une - 2 01 5 . this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.6: relative variations of gate trigger current versus junction temperature fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms and corresponding value of i t ( - - :di/dt < 50a/ s; :di/dt < 10a/ s) tp(ms) 0.01 0.1 1 10 20 1 i tsm (a), i t (a s) -40 -20 0 20 40 60 80 100 120 140 i gt (tj)/i gt (tj=25 ) 0.0 0.5 1.5 2.0 3.0 2 1.0 2.5 tj( ) 100 10 300 2 2 di/dt( ) di/dt( - - ) i tsm i gt1 &i gt2 i gt3 i gt4 i t 2 fig.8: relative variations of latching current versus junction temperature fig.7: relative variations of holding current versus junction temperature i h (tj)/i h (tj=25 ) -40 -20 0 20 40 60 80 100 120 140 i l (tj)/i l (tj=25 ) 0.0 0.5 1.5 2.0 3.0 1.0 2.5 tj( ) i l3 tj( ) -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.5 2.0 3.0 1.0 2.5 i h1 &i h3 i l4 i l1 &i l2
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